SMS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD-protected. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 8820 SOT-23 A L 3 Top.
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 8820 SOT-23 A L 3 Top View CB 1 1 2 K E D F G H 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current 1 IDM Th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS840 |
SeCoS |
P-Channel MOSFET | |
2 | SMS8S43 |
ProTek Devices |
HIGH POWER TVS ARRAY | |
3 | SMS8S43A |
ProTek Devices |
HIGH POWER TVS ARRAY | |
4 | SMS004N03A1 |
Silikron |
MOSFET | |
5 | SMS004N03D1 |
Silikron |
MOSFET | |
6 | SMS004N8EJ7 |
Silikron |
MOSFET | |
7 | SMS006N01T1 |
Silikron |
MOSFET | |
8 | SMS006N02J7 |
Silikron |
MOSFET | |
9 | SMS006N05J7 |
Silikron |
MOSFET | |
10 | SMS006N05J8 |
Silikron |
MOSFET | |
11 | SMS006N09C1 |
Silikron |
MOSFET | |
12 | SMS010N02D1 |
Silikron |
MOSFET |