SMS3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for the use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching .
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING R4 SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (t≦10s) Pulsed Drain Current 1 ID IDM Thermal.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS3400A |
SeCoS |
N-Channel MOSFET | |
2 | SMS3400Y-C |
SeCoS |
N-CHANNEL MOSFET | |
3 | SMS3401A |
SeCoS |
P-Channel MOSFET | |
4 | SMS3401J-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
5 | SMS3407 |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
6 | SMS3407-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
7 | SMS3415 |
SeCoS Halbleitertechnologie |
P-Channel MOSFET | |
8 | SMS3.3 |
Semtech |
3.3 Volt TVS Array | |
9 | SMS3.3 |
Leiditech |
TVS/ESD DIODE ARRAY AND LATCH-UP PROTECTION | |
10 | SMS3.3C |
Leiditech |
TVS/ESD DIODE ARRAY AND LATCH-UP PROTECTION | |
11 | SMS3001-C |
SeCoS |
P-Channel Enhancement Mode Power MosFET | |
12 | SMS3002-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET |