It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating: Symbol ID @ TC = 25°C .
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol ID @ TC =.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMS015N07A1 |
Silikron |
MOSFET | |
2 | SMS015N06D1 |
Silikron |
MOSFET | |
3 | SMS015N10J7 |
Silikron |
MOSFET | |
4 | SMS015N12D1 |
Silikron |
MOSFET | |
5 | SMS010N02D1 |
Silikron |
MOSFET | |
6 | SMS010N03D1 |
Silikron |
MOSFET | |
7 | SMS010N04A1 |
Silikron |
MOSFET | |
8 | SMS010N05D1 |
Silikron |
MOSFET | |
9 | SMS010N06D1 |
Silikron |
MOSFET | |
10 | SMS010N10J7 |
Silikron |
MOSFET | |
11 | SMS004N03A1 |
Silikron |
MOSFET | |
12 | SMS004N03D1 |
Silikron |
MOSFET |