2 1 The SMP550G-EL is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure incorporates an photoptic response optical filter with peak transmission at 510nm. The cathode of the photodiode is electrically connected to th.
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• EYE RESPONSE DETECTION EXCELLENT LINEARITY LOW NOISE WIDE SPECTRAL RESPONSE LOW LEAKAGE CURRENT LOW CAPACITANCE BG18 INTEGRAL OPTICAL FILTER TO39 HERMETIC METAL CAN PACKAGE EMI SCREENING MESH AVAILABLE
WINDOW Ø 5.9 ± 0.1
Ø 9.1 ± 0.2 Ø 8.1 ± 0.1
SENSITIVE SURFACE
Ø 0.45 LEAD 5.08 ± 0.2
20
3.8 ± 0.2
DESCRIPTION
2 1
The SMP550G-EL is a Silicon P.I.N. photodiode incorporated in a hermetic metal can package. The electrical terminations are via two leads of diameter 0.018" on a pitch centre diameter of 0.2". The can structure incorporates an photoptic response optical filte.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMP550G-EJ |
Seme LAB |
P.I.N. PHOTODIODE | |
2 | SMP550G-EK |
Seme LAB |
P.I.N. PHOTODIODE | |
3 | SMP5555 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
4 | SMP5556 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
5 | SMP5557 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
6 | SMP5558 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
7 | SMP5.0A |
Vishay |
Transient Voltage Suppressors | |
8 | SMP50 |
STMicroelectronics |
Trisil | |
9 | SMP5018 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
10 | SMP5019 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
11 | SMP5020 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors | |
12 | SMP5021 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |