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The 40V InterFET 2N5460, 2N5461, and 2N5462 JFET’s are targeted for sensitive amplifier stages for mid-frequencies designs. Input capacitance is typically 3.2pF. The 2N5462 is target for higher gain applications with a typical Gfs of 3.5mS. Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters BVGSS G.
• InterFET P0032F Geometry
• Typical Noise: 2.7 nV/√Hz
• Low Ciss: 3.2pF Typical
• RoHS Compliant
• SMT, TH, and Bare Die Package options.
Applications
• Audio Amplifiers
• General Purpose Amplifiers
Description
The 40V InterFET 2N5460, 2N5461, and 2N5462 JFET’s are targeted for sensitive amplifier stages for mid-frequencies designs. Input capacitance is typically 3.2pF. The 2N5462 is target for higher gain applications with a typical Gfs of 3.5mS.
Source 1 Drain 2
SOT23 Top View 3 Gate
TO-92 Bottom View
Gate 3 Drain 2 Source 1
Product Summary
Parameters BVGSS Gate to Source Breakdown Volt.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMP5461 |
InterFET |
P-Channel JFET |
|
| 2 | SMP5462 |
InterFET |
P-Channel JFET |
|
| 3 | SMP5457 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 4 | SMP5458 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 5 | SMP5459 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 6 | SMP5484 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 7 | SMP5485 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 8 | SMP5486 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 9 | SMP5.0A |
Vishay |
Transient Voltage Suppressors |
|
| 10 | SMP50 |
STMicroelectronics |
Trisil |
|
| 11 | SMP5018 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|
| 12 | SMP5019 |
InterFET Corporation |
(SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors |
|