SMP30N10 - TEMIC

SMP30N10 N-Channel Enhancement-Mode Transistor

SMP30N10 N-Channel Enhancement-Mode Transistor Product Summary V(BR)DSS (V) 100 rDS(on) (W) 0.060 TO-220AB ID (A) 30 D G DRAIN connected to TAB GD S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain .

Features

arameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamic IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 18 A VGS = 10 V, ID = 18 A, TJ = 125_C VDS = 15 V, ID = 18 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec G.