N-CHANNEL POWER MOSFET SML0505FN • Low RDS(on) • Hermetic TO-39 Metal package. • Fast Switching ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDSS Drain-Source Voltage 50V ID Drain Current – Continuous TC = 25°C 16A IDM Drain Current – Pulsed 150A VGS Gate – Source Voltage ±20V PD Total Power Dissipation at TC = 25°C 25W Derat.
rs. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 8886 Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 N-CHANNEL POWER MOSFET SML0505FN ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols BVDSS VGS(th) Parameters Drain-Source Breakdown Voltage Gate Threshold Voltage Test Conditions VGS = 0 ID = 250µA VDS = VGS ID = 250µA IGSS Gate-Source Leakage Current VGS = ±20V VDS = 0V IDSS Zero Gate Voltage Drain Current RDS(on)(1) Static.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SML010FBDH06 |
Seme LAB |
SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE | |
2 | SML013WB |
Rohm |
Chip LEDs | |
3 | SML01SC06C3A |
TT |
Silicon Carbide Schottky Barrier Diode | |
4 | SML01SC06C3B |
TT |
Silicon Carbide Schottky Barrier Diode | |
5 | SML01SC06C3C |
TT |
Silicon Carbide Schottky Barrier Diode | |
6 | SML01SC06D2A |
TT |
SiC SCHOTTKY DIODE | |
7 | SML01SC06D2B |
TT |
SiC SCHOTTKY DIODE | |
8 | SML02SC06D2A |
TT |
SILICON CARBIDE SCHOTTKY BARRIER DIODE | |
9 | SML02SC06D2B |
TT |
SILICON CARBIDE SCHOTTKY BARRIER DIODE | |
10 | SML032RGB |
Rohm |
3-color type LED | |
11 | SML0805-0010 |
Gowanda |
STANDARD RF INDUCTORS | |
12 | SML0805-0012 |
Gowanda |
STANDARD RF INDUCTORS |