SMK0860P - KODENSHI KOREA

SMK0860P Advanced N-Ch Power MOSFET

Semiconductor SMK0860P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=9.7pF(Typ.) • Low gate charge : Qg=22nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω(Max.) PIN Connection D G Ordering Information Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maxim.

Features

• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=9.7pF(Typ.)
• Low gate charge : Qg=22nC(Typ.)
• Low RDS(on) :RDS(on)=1.2Ω(Max.) PIN Connection D G Ordering Information Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)
* Drain current (Pulsed)
* Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 7.5 4.7 30 90 7.5 325 7.5 21.7 150 -55~150 Unit V V A A A W A mJ A mJ °C Drain power dissip.