SMI120N75E21 - Silikron

SMI120N75E21 IGBT

Main Product Characteristics: VDS 1200V ID 38A RDS(on) 70mΩ 1 234 Features and Benefits: TO - 247- 4L  High blocking voltage with low on-resistance  High speed switching,very low switching losses  High blocking voltage with low on-resistance  Fast intrinsic diode with low reverse recovery (Qrr)  Temperature independent turn-off switching l.

Features

TO - 247- 4L
 High blocking voltage with low on-resistance
 High speed switching,very low switching losses
 High blocking voltage with low on-resistance
 Fast intrinsic diode with low reverse recovery (Qrr)
 Temperature independent turn-off switching losses Applications:
 On-board charger/PFC
 EV battery chargers
 Booster/DC-DC converter
 Switch mode power supplies Absolute Max Rating: Symbol VDS VGS,max VGS,op ID ID(puls) PD TJ TSTG TL Parameter Drain Source Voltage Gate Source Voltage,Absolute Maximum Values Gate Source Voltage,Recommended Operational Values Continuous Dr.