SMG5403 - SeCoS Halbleitertechnologie

SMG5403 P-Channel MOSFET

The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. 1 SC-59 A L 3 3 Top View 2 C B 1 2 FEATURES Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.3.

Features

Lower Gate Threshold Voltage Small Package Outline K E D F REF. G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 J MARKING 5403 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch A B C D E F 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG 1 3 .