The G40 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is .
WIDE BAND PERFORMANCE
EXCELLENT INSERTION LOSS: < 3.0 dB (TYP.)
HIGH DYNAMIC RANGE: 30 dB TO 3000 MHz (TYP.)
FAST SWITCHING: < 0.5 µsec, 10 TO 90% (TYP.)
< 2 µsec, 0 TO 100% (TYP.) Description
The G40 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.
Ordering Information
Part N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG4008-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SMG4KN25-C |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
3 | SMG04C60 |
SanRex Corporation |
THYRISTOR | |
4 | SMG05C60 |
SanRex Corporation |
THYRISTOR | |
5 | SMG05C60A |
SanRex Corporation |
THYRISTOR | |
6 | SMG05CB60 |
SanRex Corporation |
THYRISTOR | |
7 | SMG065N40E1 |
Silikron |
IGBT | |
8 | SMG065N54E1 |
Silikron |
IGBT | |
9 | SMG065N64E1 |
Silikron |
IGBT | |
10 | SMG065N80E1 |
Silikron |
IGBT | |
11 | SMG065N80EP |
Silikron |
IGBT | |
12 | SMG065NA8E1 |
Silikron |
IGBT |