SMD15N06 - Temic

SMD15N06 N-Channel MOSFET

TEMIC Siliconix N-Channel Enhancement-Mode Transistor 175°C Maximum Junction Temperature Product Summary V(BR)DSS (V) 60 fDS(on) (0) 0.10 IDa (A) 15 SMD15N06 DPAK (TO-252) D D G~ G S ThpView S N-Channel MOSFET Absolute Maximum Ratings (l'c = 25°C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre.

Features

94) Preliminary 6-87 SMD15N06 Specifications (TJ - 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown Voltage V(BR)DSS VGS = OY,ID = 250 IlA 60 Gate Threshold Voltage VGS(th) VDS - VGS,ID - 250 IlA 2.0 Gate-Body Leakage IGSS VDS = OY,VGS = ±20V Zero Gate Voltage Drain Current VDS = 48 Y, VGS = OV IDSS VDS = 48 Y, VGS = 0 Y, TJ = 125'C On-State Drain Currentb ID(an) VDS = 5Y,VGS = 10V 15 Drain-Source On-State Resistanceb roS(an) VGS = 10 Y, ID = 7.5 A VGS -lOY, ID = 7.5 A, TJ - 125'C Forward 1tansconductanceb gr, VDS = .