SMB60N03-10L - Temic

SMB60N03-10L N-Channel Enhancement Mode MOSFET

SMB60N03-10L N-Channel Enhancement-Mode MOSFETs, Logic Level Product Summary V(BR)DSS (V) 30 rDS(on) (W) 0.01 @ VGS = 10 V ID (A)a 60 D www.DataSheet4U.com TO-263 G G D S Top View S N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulse.

Features

ix FaxBack, 1-408-970-5600. Please request FaxBack document #70269. Symbol RthJA RthJC Limit 80 1.2 Unit _C/W Siliconix S-49520—Rev. C, 18-Dec-96 1 SMB60N03-10L Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current www.DataSheet4U.com On-State Drain Currentb ID(on) IDSS VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 30 V, VGS = 0 V, TJ = 175_C VDS = 10 V, VGS = 10V VGS =.