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SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA Breakdown Voltage Peak Pulse Power 6.8 to 200 Volts 400 Watts FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Glass passivated junction • Low inductance surge resistance • Fast response time: typical less than 1.0ps .
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O
• For surface mounted applications
• Glass passivated junction
• Low inductance surge resistance
• Fast response time: typical less than 1.0ps
from 0 volts to V(BR) for unidirectional AND 5.0ns for bidirectional types
• 400W peak pulse capability with a 10/1000μs waveform, repetition rate (duty cycle): 0.01%
• For devices with V(BR) ≥10V, ID are typically less than 1.0μA
• High temperature soldering guaranteed: 250℃/10 seconds at terminals
DO-213AB Dimensions in inches and (millimeters)
MECHANICAL DATA
• Cass: JE.
SM62 - MIC GROUP RECTIFIERS
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR SM6.8 THRU SM200CA FEATURES • • • • • Breakdown Voltage Peak Pulse Power 6.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SM6.8 |
MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
|
| 2 | SM6.8A |
MIC |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
|
| 3 | SM600 |
Microsemi Corporation |
(SM600 - SM612) SWITCHING REGULATOR POWER OUTPUT STAGES |
|
| 4 | SM6002 |
Solid State Optronic |
MOSFET Driver |
|
| 5 | SM6002NAF |
Sinopower |
N-Channel MOSFET |
|
| 6 | SM6002NFP |
SINOPOWER |
N-Channel Enhancement Mode MOSFET |
|
| 7 | SM6002NSF |
Sinopower |
N-Channel MOSFET |
|
| 8 | SM6002NSKP |
SINOPOWER |
N-Channel Enhancement Mode MOSFET |
|
| 9 | SM6002NSU |
Sinopower |
N-Channel MOSFET |
|
| 10 | SM6003 |
Solid State Optronic |
MOSFET Driver |
|
| 11 | SM6004 |
Sharp Electrionic Components |
16-Bit Single-Chip Microcomputers |
|
| 12 | SM6005 |
Solid State Optronic |
MOSFET Driver |
|