• N Channel 20V/8A, R DS(ON) = 18mΩ (max.) @ V GS = 10V RDS(ON) = 22mΩ (max.) @ VGS = 4.5V RDS(ON) = 32.5mΩ (max.) @ VGS = 2.5V R DS(ON) = 65mΩ (max.) @ V GS = 1.8V • P Channel D2 D2 D1 D1 G2 S2 G1 S1 DFN3x2B-8 -20V/-4.5A, RDS(ON) = 60mΩ (max.) @ VGS =-4.5V RDS(ON) = 90mΩ (max.) @ VGS =-2.5V R DS(ON) = 150mΩ (max.) @ V GS =-.
Pin Description
• N Channel
20V/8A,
R DS(ON)
=
18mΩ
(max.)
@
V GS
=
10V
RDS(ON) = 22mΩ (max.) @ VGS = 4.5V
RDS(ON) = 32.5mΩ (max.) @ VGS = 2.5V
R DS(ON)
=
65mΩ
(max.)
@
V GS
=
1.8V
• P Channel
D2 D2 D1 D1
G2 S2 G1
S1
DFN3x2B-8
-20V/-4.5A,
RDS(ON) = 60mΩ (max.) @ VGS =-4.5V
RDS(ON) = 90mΩ (max.) @ VGS =-2.5V
R DS(ON)
=
150mΩ
(max.)
@
V GS
=-1.8V
• ESD protection
• Reliable and Rugged
(8) (7) D1 D1
(6) (5) D2 D2
(2) (4) G1 G2
• Lead Free and Green Devices Available
(RoHS Compliant)
Applications
S1 S2 (1) (3)
• Power DC-DC Conversion Circuits for Net-
w.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SM320 |
Dc Components |
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
2 | SM320 |
Samsung |
Advanced Flexible Component Placer | |
3 | SM3200A |
Eris |
Schottky Barrier Rectifiers | |
4 | SM3200A |
UPM |
Schottky Barrier Rectifiers | |
5 | SM3200A |
SeCoS |
Schottky Barrier Rectifiers | |
6 | SM3200A |
AiT Components |
SCHOTTKY DIODE | |
7 | SM3200AM-C |
SeCoS |
Surface Mount Schottky Barrier Rectifiers | |
8 | SM3200B |
SeCoS |
Schottky Barrier Rectifiers | |
9 | SM3200C |
SeCoS |
Schottky Barrier Rectifiers | |
10 | SM3201PSQA |
Sinopower |
P-Channel MOSFET | |
11 | SM3202PSQA |
Sinopower |
P-Channel MOSFET | |
12 | SM320561K |
ETC |
Display |