SM16JZ51 - Toshiba Semiconductor

SM16JZ51 AC POWER CONTROL APPLICATIONS

SM16GZ51,SM16JZ51 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM16GZ51,SM16JZ51 AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak off−State Voltage l R.M.S On−State Current l High Commutating (dv / dt) l Isolation Voltage : VDRM = 400, 600 V : IT (RMS) = 16 A : (dv / dt) c = 10 V / µs : VISOL = 1500 V AC MAXIMUM RATINGS CHARACTERISTI.

Features

2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage Critical Rate of Rise of Off−State Voltage at Commutation VTM VGD IH Rth (j−c) dv / dt (dv / dt) c ITM = 25 A VD = Rated, Tc = 125°C VD = 12 V, ITM = 1 A Junctio.