SLP830S - Maple Semiconductor

SLP830S N-Channel MOSFET

This Power MOSFET is produced using Maple semi ‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power su.

Features

- 5.0A, 500V, RDS(on) = 1.35Ω@VGS = 10 V - Low gate charge ( typical 26nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GD S TO-220F GDS TO-220 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (T C = 25℃) - Continuous (T C = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Voltage Sin.