This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 4.5A, 650V, RDS(on)typ. = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLP5N65S |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLP5N60C |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLP5N50S |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLP50R140SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLP50R240SJ |
Maple Semiconductor |
N-Channel MOSFET | |
6 | SLP50R290SJ |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLP5R-2 |
Framatome Connectors International |
(SLPxxR/S-2) Flex Printed Circuit | |
8 | SLP5S-2 |
Framatome Connectors International |
(SLPxxR/S-2) Flex Printed Circuit | |
9 | SLP-1xxx-51 |
Sanyo |
LED lamp | |
10 | SLP-2xxx-51 |
Sanyo |
LED lamp | |
11 | SLP-3117E-51 |
Sanyo Semicon Device |
3.1mm yellow-green contact type LED lamp (U-cut version) | |
12 | SLP-3130C-81 |
Sanyo Semicon Device |
5mm yelloe-green contact type LED lamp |