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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 4A, 650V, RDS(on)typ. = 2.32Ω@VGS = 10 V - Low gate charge ( typical 13nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP4N65C SLF4N65C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Ga.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SLP4N65S |
Maple Semiconductor |
N-Channel MOSFET |
|
| 2 | SLP4N65UZ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 3 | SLP4N60C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 4 | SLP4N60S |
Maple Semiconductor |
N-Channel MOSFET |
|
| 5 | SLP4N70C |
Maple Semiconductor |
700V N-Channel MOSFET |
|
| 6 | SLP40N26C |
Maple Semiconductor |
260V N-Channel MOSFET |
|
| 7 | SLP4R-2 |
Framatome Connectors International |
(SLPxxR/S-2) Flex Printed Circuit |
|
| 8 | SLP4S-2 |
Framatome Connectors International |
(SLPxxR/S-2) Flex Printed Circuit |
|
| 9 | SLP-1xxx-51 |
Sanyo |
LED lamp |
|
| 10 | SLP-2xxx-51 |
Sanyo |
LED lamp |
|
| 11 | SLP-3117E-51 |
Sanyo Semicon Device |
3.1mm yellow-green contact type LED lamp (U-cut version) |
|
| 12 | SLP-3130C-81 |
Sanyo Semicon Device |
5mm yelloe-green contact type LED lamp |
|