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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 12.0A, 600V, RDS(on)typ = 0.51Ω@VGS = 10 V - Low gate charge ( typical 44.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60C SLF12N60C VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SLP12N60UZ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 2 | SLP12N65C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 3 | SLP12N65S |
Maple Semiconductor |
N-Channel MOSFET |
|
| 4 | SLP12R-2 |
Framatome Connectors International |
(SLPxxR/S-2) Flex Printed Circuit |
|
| 5 | SLP12S-2 |
Framatome Connectors International |
(SLPxxR/S-2) Flex Printed Circuit |
|
| 6 | SLP10N60C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 7 | SLP10N60U |
Maple Semiconductor |
N-Channel MOSFET |
|
| 8 | SLP10N65C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 9 | SLP10N65S |
Maple Semiconductor |
N-Channel MOSFET |
|
| 10 | SLP10N65U |
Maple Semiconductor |
N-Channel MOSFET |
|
| 11 | SLP10N70C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 12 | SLP10N80CZ |
Maple Semiconductor |
N-Channel MOSFET |
|