This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 7.5A, 650V, RDS(on) typ. = 1.2Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF8N65C |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLF8N65S |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF8N60C |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLF8N60U |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLF80R240SJ |
Maple Semiconductor |
N-Channel MOSFET | |
6 | SLF80R380SJ |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLF80R500SJ |
Maple Semiconductor |
N-Channel MOSFET | |
8 | SLF80R600SJ |
Maple Semiconductor |
N-Channel MOSFET | |
9 | SLF80R850SJ |
Maple Semiconductor |
N-Channel MOSFET | |
10 | SLF830S |
Maple Semiconductor |
N-Channel MOSFET | |
11 | SLF830UZ |
Maple Semiconductor |
N-Channel MOSFET | |
12 | SLF840C |
Maple Semiconductor |
N-Channel MOSFET |