This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 2,0A, 600V, RDS(on)typ = 4Ω@VGS = 10 V - Low gate charge ( typical 5.8nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Singl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF2N60C |
SL SEMI |
N-Channel MOSFET | |
2 | SLF2N65UZ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF20N50C |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLF2500 |
Semtech Corporation |
(SLFxx000) Fast Recovery High Voltage Rectifier Assembly | |
5 | SLF001 |
AMI |
CMOS Gate Array | |
6 | SLF002 |
AMI |
CMOS Gate Array | |
7 | SLF004 |
AMI |
CMOS Gate Array | |
8 | SLF006 |
AMI |
CMOS Gate Array | |
9 | SLF011 |
AMI |
CMOS Gate Array | |
10 | SLF012 |
AMI |
CMOS Gate Array | |
11 | SLF014 |
AMI |
CMOS Gate Array | |
12 | SLF016 |
AMI |
CMOS Gate Array |