This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 12.0A, 600V, RDS(on)typ = 0.46Ω@VGS = 10 V - Low gate charge ( typical 42.7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP12N60UZ SLF12N60UZ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF12N60C |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLF12N65C |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF12N65S |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLF1255 |
Chilisin |
SMD Shielded Power Inductors | |
5 | SLF12555 |
TDK |
SMD Inductor | |
6 | SLF1255T |
Chilisin |
SMD Shielded Power Inductors | |
7 | SLF1265 |
Chilisin |
SMD Shielded Power Inductors | |
8 | SLF1265T |
Chilisin |
SMD Shielded Power Inductors | |
9 | SLF1275 |
Chilisin |
SMD Shielded Power Inductors | |
10 | SLF1275T |
Chilisin |
SMD Shielded Power Inductors | |
11 | SLF10000 |
Semtech Corporation |
(SLFxx000) Fast Recovery High Voltage Rectifier Assembly | |
12 | SLF1004 |
Sunltech |
Drum Core Surface Mount Unshielded Power Inductors |