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The SLD323V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be achieved by QW-SCH structure∗2. ∗1 MOCVD: Metal Organic Chemical Vapor Deposition ∗2 QW-SCH: Quantum Well Separate Confinement Heterostructure Features • High.
• High power Recommended optical power output: Po = 1.0W
• Low operating current: Iop = 1.4A (Po = 1.0W) Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement Structure GaAlAs quantum well structure laser diode Absolute Maximum Ratings (Tc = 25°C)
• Optical power output Po 1.1
• Reverse voltage VR LD 2 PD 15
• Operating temperature (Tc) Topr
–10 to +30
• Storage temperature Tstg
–40 to +85 Pin Configuration
W V V °C °C
2
1
3 1. LD cathode 2. PD anode 3. COMMON Bottom View
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SLD3236VF |
Sony Corporation |
Laser Diode |
|
| 2 | SLD3237VF |
Sony Corporation |
400 mW Output Blue-Violet Semiconductor Laser Diodes |
|
| 3 | SLD3237VFR |
Sony Corporation |
400 mW Output Blue-Violet Semiconductor Laser Diodes |
|
| 4 | SLD323XT |
Sony Corporation |
1W High Power Laser Diode |
|
| 5 | SLD322V |
Sony Corporation |
High Power Density 0.5W Laser Diode |
|
| 6 | SLD322XT |
Sony Corporation |
0.5W High Power Laser Diode |
|
| 7 | SLD324ZT |
Sony Corporation |
High-Power Density 2W Laser Diode |
|
| 8 | SLD326YT |
Sony Corporation |
4W High Power Laser Diode |
|
| 9 | SLD327YT |
Sony Corporation |
3W High Power Laser Diode |
|
| 10 | SLD30-018 |
Littelfuse |
TVS Diodes |
|
| 11 | SLD301B |
Sony Corporation |
Block-type 100mW High Power Laser Diode |
|
| 12 | SLD301V |
Sony Corporation |
100mW High Power Laser Diode |
|