Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C IFM= – ICM Tcase = 25/80 °C; tp = 1 ms IFSM tp = 10 ms; sin.; Tj = 150 °C I2t tp = 10 ms.
• MOS input (voltage controlled)
• N channel, Homogeneous Si
• Low inductance case
• Very low tail current with low
temperature dependence
• High short circuit capability,
self limiting to 6
* Icnom
• Latch-up free
• Fast & soft inverse CAL
diodes8)
• Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
• Large clearance (10 mm) and
creepage distances (20 mm).
Typical Applications: → B 6 -115
• Switching (not for linear use)
1) Tcase = 25 °C, unless otherwise specified
2) IF =
– IC, VR = 600 V,
– diF/dt = 800 A/µs, VGE = 0 V
3) Use VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKM100GAR12F4 |
Semikron |
IGBT | |
2 | SKM100GAR17E4 |
Semikron |
IGBT | |
3 | SKM100GAL123D |
Semikron |
IGBT | |
4 | SKM100GAL12F4 |
Semikron |
IGBT | |
5 | SKM100GAL12T4 |
Semikron International |
IGBT | |
6 | SKM100GAL163D |
Semikron International |
IGBT | |
7 | SKM100GAL17E4 |
Semikron |
IGBT | |
8 | SKM100GAxxxD |
Semikron International |
SEMITRANS IGBT | |
9 | SKM100GB063D |
Semikron International |
IGBT | |
10 | SKM100GB123D |
Semikron International |
IGBT | |
11 | SKM100GB124D |
Semikron International |
IGBT | |
12 | SKM100GB125DN |
Semikron International |
IGBT |