SKiiP 81 ANB 15 T1 Absolute Maximum Ratings Symbol Conditions 1) Bridge Rectifier VRRM ID IFSM I²t Theatsink = 80 °C tp = 10 ms; sin. 180°, Tj = 25 °C tp = 10 ms; sin. 180°, Tj = 25 °C 1500 100 3) 1000 5000 1200 ± 20 33 / 22 66 / 44 1200 24 / 17 48 / 34 – 40 ... + 150 – 40 ... + 125 2500 V A A A²s V V A A V A A °C °C V Values Units MiniSKiiP 8 SEMIKRON in.
– 1,7 V V mΩ K/W
min.
typ.
max.
Units
IGBT - Chopper IC = 25 A Tj = 25 (125) °C VCEsat td(on) VCC = 600 V; VGE = ± 15 V tr IC = 25 A; Tj = 125 °C Rgon = Rgoff = 47 Ω td(off) tf inductive load Eon + Eoff VCE = 25 V; VGE = 0 V, 1 MHz Cies per IGBT Rthjh Diode 2) - Chopper VF = VEC VTO rT IRRM Qrr Eoff Rthjh RTS M1 Case IF = 15 A Tj = 25 (125) °C Tj = 125 °C Tj = 125 °C IF = 15 A; VR =
– 600 V diF/dt =
– 400 A/µs VGE = 0 V, Tj = 125 °C per diode T = 25 / 100 °C mounting torque mechanical outline see pages B 16
–13 and B 16
– 14 2,5 V V mΩ A µC mJ K/W V ns ns ns ns mJ nF K/W
UL recognized fi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKIIP81AC12 |
Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power | |
2 | SKIIP81AC12I |
Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power | |
3 | SKIIP802GB061-259CTV |
Semikron International |
2-pack - integrated intelligent Power System | |
4 | SKIIP802GB120040 |
Semikron |
IGBT | |
5 | SKIIP802GB120401W |
Semikron |
IGBT | |
6 | SKIIP803GD061-3DUW |
Semikron International |
6-pack-integrated intelligent power system | |
7 | SKIIP82AC06 |
Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power | |
8 | SKIIP82AC06I |
Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power | |
9 | SKIIP82AC12 |
Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power | |
10 | SKIIP82AC12 |
Semikron |
IGBT 3-phase bridge inverter | |
11 | SKIIP82AC12I |
Semikron |
Miniskiip 8 Semikron Integrated Intelligent Power | |
12 | SKIIP82AC12I |
Semikron |
IGBT 3-phase bridge inverter |