SK75GARL07S5TD1E1 - Semikron

SK75GARL07S5TD1E1 IGBT

SK75GARL07S5TD1E1 SEMITOP®E1 Symmetrical Boost Engineering Sample SK75GARL07S5TD1E1 Target Data Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 650V Trench5 IGBT (S5) • Rapid switching diode technology • Integrated NTC temperature sensor • UL recognized file no. E 63 532 Typical Applicat.

Features

• Optimized design for superior thermal performances
• Low inductive design
• Press-Fit contact technology
• 650V Trench5 IGBT (S5)
• Rapid switching diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532 Typical Applications
• UPS
• Solar Remarks
• Recommended Tjop= -40 ... +150°C
• Diode1: outer Freewheeling Diodes
• Diode2: inner Antiparalell Diodes Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °C Ts = 25 °C Ts = 70 °C Ts = 25 °C Ts = 70 °C VCC = .