SK35GD12T4ETE1 - Semikron

SK35GD12T4ETE1 IGBT

SK35GD12T4ETE1 SEMITOP®E1 IGBT module SK35GD12T4ETE1 Features* • Low inductive design • Press-Fit contact technology • Rugged mounting due to integrated mounting clamps • Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC) • Trench4 IGBT technology • Robust and soft switching CAL4F diode technology • Integrated NTC temper.

Features

• Low inductive design
• Press-Fit contact technology
• Rugged mounting due to integrated mounting clamps
• Heat transfer and insulation through direct copper bonded aluminium oxide ceramic (DBC)
• Trench4 IGBT technology
• Robust and soft switching CAL4F diode technology
• Integrated NTC temperature sensor
• UL recognized file no. E 63 532 Typical Applications
• Motor drives
• Servo drives
• Air conditioning
• Auxiliary Inverters
• UPS Absolute Maximum Ratings Symbol Conditions IGBT 1 VCES IC IC ICnom ICRM VGES tpsc Tj Tj = 25 °C λpaste=0.8 W/(mK) Tj = 175 °C λpaste=2.5 W/(mK) Tj = 175 °.