SK202 - Polyfet RF Devices

SK202 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"TM process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. S.

Features

low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10.0 Watts Push - Pull Package Style AK HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Total Device Dissipation 50 Watts Junction to Case Thermal Resistance o 3.40 C/W ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage 200 oC oo -65 C to 150 C 3.0 A 70 V Drain to Source Voltage 70 V Gate to Source Voltage 20 V RF CHARACT.