AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version Subjects (major changes since last revision) Date Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given i.
Recommended for:
A
1200V technology 120 µm chip
power modules and discrete
soft, fast switching
devices
low reverse recovery charge
C
small temperature coefficient
qualified according to JEDEC for target
Applications:
applications
SMPS, resonant applications,
drives
Chip Type SIDC56D120F6
VR
IFn
1200V 75A
Die Size 7.5 x 7.5 mm2
Package sawn on foil
Mechanical Parameters Die size Area total Anode pad size Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal
7.5 x 7.5 56.25
6.78 x 6.78 120 150 248 Photoimide 3200 n.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIDC56D170E6 |
Infineon |
Fast switching diode | |
2 | SIDC50D60C8 |
Infineon |
Fast switching diode | |
3 | SIDC50D65C8 |
Infineon |
Fast switching diode | |
4 | SIDC53D120H8 |
Infineon |
Fast switching diode | |
5 | SIDC59D170H |
Infineon |
Fast switching diode | |
6 | SIDC02D60C8 |
Infineon |
Fast switching diode | |
7 | SIDC02D65C8 |
Infineon |
Fast switching diode | |
8 | SIDC03D120H8 |
Infineon |
Fast switching diode | |
9 | SIDC03D60C8 |
Infineon |
Fast switching diode | |
10 | SIDC03D65C8 |
Infineon |
Fast switching diode | |
11 | SIDC05D60C8 |
Infineon |
Fast switching diode | |
12 | SIDC05D60SIC3 |
Infineon Technologies AG |
Silicon Carbide Schottky Diode |