SIA416DJ - Vishay

SIA416DJ N-Channel 100 V (D-S) MOSFET

SiA416DJ Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. 0.083 at VGS = 10 V 0.130 at VGS = 4.5 V PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 Bottom View S 2.05 mm G FEATURES ID (A)a 11.3 9 Qg (Typ.) 3.5 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compli.

Features

ID (A)a 11.3 9 Qg (Typ.) 3.5 nC
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• DC/DC Converters
• Full-Bridge Converters
• For Power Bricks and POL Power D Marking Code ARX Part # code XXX Lot Traceability and Date code S N-Channel MOSFET G 2.05 mm Ordering Information: SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °.