The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capac.
an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 72989 S-60145Rev. B, 13-Feb-06 www.vishay.com 1 SPICE Device Model Si7452DP Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 3.7 651 0.0063 57 0.84 Measured .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI7450DP |
Vishay Siliconix |
N-Channel 200-V (D-S) MOSFET | |
2 | SI7454CDP |
Vishay |
N-Channel 100 V (D-S) MOSFET | |
3 | SI7454DDP |
Vishay |
N-Channel 100-V (D-S) MOSFET | |
4 | SI7454DP |
Vishay Siliconix |
N-Channel 100-V (D-S) MOSFET | |
5 | SI7456DDP |
Vishay |
N-Channel 100-V (D-S) MOSFET | |
6 | SI7456DP |
Vishay Siliconix |
N-Channel 100-V (D-S) MOSFET | |
7 | SI7458DP |
Vishay Siliconix |
N-Channel 20-V (D-S) Fast Switching MOSFET | |
8 | Si7459DP |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
9 | Si7401DN |
Analog Devices |
Thermoelectric Cooler Controller | |
10 | SI7403DN |
Vishay Siliconix |
P-Channel MOSFET | |
11 | Si7407DN |
Vishay |
P-Channel MOSFET | |
12 | SI7411DN |
Vishay Siliconix |
P-Channel MOSFET |