SI7413DN - Vishay Siliconix

SI7413DN P-Channel MOSFET

P-Channel 20-V (D-S) MOSFET Si7413DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.015 at VGS = - 4.5 V - 20 0.020 at VGS = - 2.5 V 0.029 at VGS = - 1.8 V ID (A) - 13.2 - 11.4 - 9.5 PowerPAK 1212-8 3.30 mm D 8D 7 D 6 S 1S 2 D 5 Bottom View 3.30 mm S 3 G 4 Ordering Information: Si7413DN-T1-E3 (Lead (Pb)-free) Si7413DN-T1-GE3 (Lead (Pb)-fr.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile APPLICATIONS
• Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C ID - 13.2 - 9.5 - 8.4 - 6.1 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 3.2 - 1.3 Maximum Power Dissipationa TA = 25 °C.