SI7356DP - Vishay Siliconix

SI7356DP N-Channel MOSFET

N-Channel 30-V (D-S) MOSFET Si7356DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.003 @ VGS = 10 V 0.004 @ VGS = 4.5 V ID (A) 30 27 Qg (Typ) 45 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7356DP-T1 Si7356DP-T1—E3 (Lead (Pb)-Free) FEATURES D Ultra-Low On-Resistance Using High Dens.

Features

D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Low-Side DC/DC Conversion
  – Notebook
  – Server
  – Workstation D Point-of-Load Conversion D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction.