SI6946DQ - Vishay Siliconix

SI6946DQ Dual N-Channel MOSFET

Si6946DQ Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.080 @ VGS = 4.5 V 0.110 @ VGS = 2.5 V ID (A) 2.8 2.1 D TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S N-Channel MOSFET D 8 D2 S2 S2 G2 G Si6946DQ 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Vol.

Features

A Limit 125 Unit _C/W 2-1 Si6946DQ Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 2.8 A rDS(on) DS( ) gfs VSD VGS = 2.5 V, ID = 2.1 A VDS = 15 V, ID = 2.8 A IS = 1.0 A, VGS = 0 V 12 1.2 "10 "4 0.080 0.110 W S V 0.6 "100 1 5 V nA mA Symbol Test Condition Min Typ Max Unit On-State Drain Currenta I.