Si5855DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.110 at VGS = - 4.5 V - 20 0.160 at VGS = - 2.5 V 0.240 at VGS = - 1.8 V ID (A) - 3.6 - 3.0 - 2.4 SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.375 V at 1 A IF (A) 1.0 FEATURES • Halogen-free According to IEC .
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• Ultra Low Vf Schottky
• Si5853DC Pin Compatible
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Charging Circuit in Portable Devices
1206-8 ChipFET®
1
A
KA
K D D
S G
Marking Code
JB XXX Lot Traceability and Date Code
Part # Code Bottom View
Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
S G
K
D P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | Si5853CDC |
Vishay |
P-Channel MOSFET | |
2 | SI5853DC |
Vishay Siliconix |
P-Channel MOSFET | |
3 | Si5853DDC |
Vishay |
P-Channel 20V (D-S) MOSFET | |
4 | Si5856DC |
Vishay |
N-Channel 1.8 V (G-S) MOSFET | |
5 | Si5857DU |
Vishay |
P-Channel 20-V (D-S) MOSFET | |
6 | Si5858DU |
Vishay |
N-Channel 20-V (D-S) MOSFET | |
7 | SI500D |
Silicon Laboratories |
DIFFERENTIAL OUTPUT SILICON OSCILLATOR | |
8 | Si5010 |
Silicon Laboratories |
SONET/SDH CLOCK/DATA RECOVERY | |
9 | SI5010 |
ifm |
Flow sensors | |
10 | Si50122-A3 |
Silicon Laboratories |
CLOCK GENERATOR | |
11 | Si50122-A4 |
Silicon Laboratories |
CLOCK GENERATOR | |
12 | SI5013 |
Silicon Laboratories |
OC-12/3 / STM-4/1 SONET/SDH CDR |