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www.DataSheet.co.kr Si4462DY New Product Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching ID (A) 1.50 1.45 rDS(on) (W) 0.480 @ VGS = 10 V 0.510 @ VGS = 6.0 V APPLICATIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSF.
PRODUCT SUMMARY VDS (V) 200 D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching ID (A) 1.50 1.45 rDS(on) (W) 0.480 @ VGS = 10 V 0.510 @ VGS = 6.0 V APPLICATIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Single Avalanch Current Single Avalanch Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | Si4462-A1 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 2 | Si4460 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 3 | Si4460-A1 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 4 | Si4460-C |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 5 | Si4461 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 6 | Si4461-A1 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 7 | Si4461-C |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 8 | Si4463 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 9 | Si4463-A1 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 10 | Si4463-C |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|
| 11 | SI4463BDY |
Vishay |
P-Channel MOSFET |
|
| 12 | Si4464 |
Silicon Laboratories |
LOW-CURRENT TRANSCEIVER |
|