SI4425DY-T1-E3 - VBsemi

SI4425DY-T1-E3 P-Channel MOSFET

SI4425DY-T1-E3 P-Channel 30-V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.0125 at VGS = - 10 V 0.0180 at VGS = - 4.5 V ID (A)d - 11.6 - 10 Qg (Typ.) 22 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tes.

Features

• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested APPLICATIONS
• Load Switches - Notebook PCs - Desktop PCs ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation T.