SI3424BDV - Vishay

SI3424BDV MOSFET

New Product N-Channel 30-V (D-S) MOSFET Si3424BDV Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.028 at VGS = 10 V 30 0.038 at VGS = 4.5 V ID (A) 8a 7 Qg (Typ) 6.2 FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT TSOP-6 Top View D 3 mm D G 16 25 34 2.85 mm D D S Marking .

Features

• TrenchFET® Power MOSFET
• 100 % Rg Tested APPLICATIONS
• Load Switch for Portable Devices RoHS COMPLIANT TSOP-6 Top View D 3 mm D G 16 25 34 2.85 mm D D S Marking Code YY AG XX Lot Traceability and Date Code Part # Code Ordering Information: Si3424BDV-T1-E3 (Lead (Pb)-free) D (1, 2, 5, 6) G (3) (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C)a TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Sou.