SI3410DV - Vishay Siliconix

SI3410DV N-Channel MOSFET

www.DataSheet.co.kr Si3410DV Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES ID (A)a 8 8 Qg (Typ.) 9.2 nC PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0195 at VGS = 10 V 0.023 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Notebook Load Switch • Low.

Features

ID (A)a 8 8 Qg (Typ.) 9.2 nC PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0195 at VGS = 10 V 0.023 at VGS = 4.5 V
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Notebook Load Switch
• Low Current dc-to-dc TSOP-6 Top View D 1 6 D D (1, 2, 5, 6) 3 mm D 2 5 D Marking Code G 3 4 S AM XXX Lot Traceability and Date Code Part # Code 2.85 mm (4) Ordering Information: Si3410DV-T1-E3 (Lead (Pb)-free) Si3410DV-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G (3) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unles.