N-Channel 20 V (D-S) MOSFET Si1056X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.089 at VGS = 4.5 V 20 0.098 at VGS = 2.5 V 0.121 at VGS = 1.8 V ID (A) 1.32 1.26 1.13 Qg (Typ.) 5.2 SC-89 (6-LEADS) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/.
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
D1 D2 G3
6D 5D 4S
Marking Code
YY
S XX
Lot Traceability and Date Code
Part # Code
Top View
Ordering Information: Si1056X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI1050 |
Sanken |
SI1050x | |
2 | SI1050X |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SI1051X |
Vishay Siliconix |
P-Channel 8-V (D-S) MOSFET | |
4 | SI1054X |
Vishay Siliconix |
N-Channel 12-V (D-S) MOSFET | |
5 | SI1058X |
Vishay Siliconix |
N-Channel 20-V (D-S) MOSFET | |
6 | SI1000 |
NTE Electronics |
(SI Series) SNAP-IN MOUNT ALUMINUM ELECTROLYTIC | |
7 | Si1000 |
Silicon Laboratories |
10-Bit ADC MCU | |
8 | Si1001 |
Silicon Laboratories |
10-Bit ADC MCU | |
9 | Si1001-C |
Silicon Laboratories |
10-bit ADC MCU | |
10 | Si1002 |
Silicon Laboratories |
10-Bit ADC MCU | |
11 | SI1002R |
Vishay |
N-channel MOSFET | |
12 | Si1003 |
Silicon Laboratories |
10-Bit ADC MCU |