SGP10N60 - Infineon Technologies Corporation

SGP10N60 Fast S-igbt in Npt-technology

SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Fast S-IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperat.

Features

g junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55...+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SGP10N60 www.DataSheet4U.com SGB10N60, SGW10N60 Symbol Conditions Max. Value Unit Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
  – case Thermal resistance, junction
  – ambient SMD version, device on PCB 1) RthJC RthJA RthJA TO-220AB TO-247AC TO-263AB 1.2 62 40 40 K/W Electrical Characteristic, at Tj = 25 °C, unless .