SGH23N60UFD - Fairchild Semiconductor

SGH23N60UFD IGBT

Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A • High Input Impedance • CO-PAK, IG.

Features

• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
• High Input Impedance
• CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Maximum Powe.