RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply the SGB-6433 does not require a drop resistor as compared to typical Darlington amplifiers. This.
a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-6433 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is on chip matched to 50Ω and an external bias inductor choke is required for the application band. Optimum Technology Matching® Applied Vbias NC NC VCC GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS 9 SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS NC NC RFIN NC Active Bias NC NC RFOUT NC Features High Reliability SiGe HBT Technology Robust Class 1C ESD Simpl.
Sirenza Microdevices’ SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SGB-6433Z |
Sirenza Microdevices |
DC-3.5 GHz Active Bias Gain Block | |
2 | SGB-6433Z |
RF Micro Devices |
DC to 3.5GHz ACTIVE BIAS GAIN BLOCK | |
3 | SGB-6533 |
Sirenza Microdevices |
DC - 3 GHz Active Bias Gain Block | |
4 | SGB-2233 |
ETC |
DC-4.5GHz Active Bias Gain Block | |
5 | SGB-2233 |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK | |
6 | SGB-2233Z |
Sirenza Microdevices |
DC - 4.5 GHz Active Bias Gain Block | |
7 | SGB-2233Z |
RF Micro Devices |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK | |
8 | SGB-2433 |
Stanford Microdevices |
DC - 4 GHz Active Bias Gain Block | |
9 | SGB-2433Z |
Sirenza Microdevices |
DC - 4 GHz Active Bias Gain Block | |
10 | SGB-4333 |
Sirenza |
Active Bias Gain Block | |
11 | SGB-4333Z |
Sirenza Microdevices |
DC - 3 GHz Active Bias Gain Block | |
12 | SGB-4533 |
ETC |
DC - 3 GHz Active Bias Gain Block |