SG8SC4M Schottky Barrier Diodes 40V, 8A Feature High Recovery Speed Tj=175℃ Low VF Pb free terminal RoHS:Yes OUTLINE Package (House Name): FTO-220G Package (JEITA Code): SC-91 Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Repetitive peak sur.
em Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance VF IR Ct Rth(j-c) IF=4A, Pulse measurement, per diode VR=40V, Pulse measurement, per diode f=1MHz, VR=10V, per diode Junction to case, With heatsink ※︓See the original Specifications Ratings MIN TYP MAX 0.49 0.56 0.3 100 3.3 Unit V mA pF ℃/W Shindengen Electric Manufacturing Co., Ltd. 2/6 SG8SC4M_Rev.02(2022.03) CHARACTERISTIC DIAGRAMS Shindengen Electric Manufacturing Co., Ltd. 3/6 SG8SC4M_Rev.02(2022.03) Shindengen Electric Manufacturing Co., Ltd. 4/6 SG8SC4M_Rev.02(2022.03) Outline Dime.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SG8002CE |
ETC |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR | |
2 | SG8002DB |
Epson Company |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR | |
3 | SG8002DC |
Epson Company |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR | |
4 | SG8002JC |
ETC |
PROGRAMMABLE HIGH-FREQUENCY CRYSTAL OSCILLATOR | |
5 | SG8002JF |
Epson Company |
Wide frequency output by PLL technology | |
6 | SG800EX25 |
Toshiba Semiconductor |
GATE TURN-OFF THYRISTOR | |
7 | SG8020 |
Solid State Optronic |
IGBT Gate Drive Optocoupler | |
8 | SG8050 |
Solid State Optronic |
IGBT Gate Drive Optocoupler | |
9 | SG8080 |
Solid State Optronic |
IGBT Gate Drive Optocoupler | |
10 | SG8F6402 |
LIZE |
8-Bit Flash Microcontroller | |
11 | SG8UP5393 |
SiGma Micro |
8-Bit OTP Microcontroller | |
12 | SG-10 |
Epson Company |
SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR |