SFT1431-E-VB SFT1431-E-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.005 at VGS = 10 V 0.006 at VGS = 4.5 V TO-252 ID (A)a, e 80 68 Qg (Typ) 31 nC D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GDS To.
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
• Server
• DC/DC
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.1 mH
EAS
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SFT1431 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
2 | SFT1431 |
ON Semiconductor |
Power MOSFET | |
3 | SFT14 |
Taiwan Semiconductor |
(SFT11 - SFT18) Super Fast Rectifiers | |
4 | SFT1402 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
5 | SFT1403 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
6 | SFT1405 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
7 | SFT1407 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
8 | SFT1423 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
9 | SFT1423 |
ON Semiconductor |
N-Channel Power MOSFET | |
10 | SFT1427 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET General-Purpose Switching Device | |
11 | SFT1440 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | SFT1440 |
ON Semiconductor |
N-Channel Power MOSFET |