SFS2955 - Fairchild Semiconductor

SFS2955 Advanced Power MOSFET

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge o ! 175 C Operating Temperature ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Low RDS(ON) : 0.22 Ω (Typ.) SFS2955 BVDSS = -60 V RDS(on) = 0.3 Ω ID = -7.3 A TO-220F 1 2 3 1.Gat.

Features

! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge o ! 175 C Operating Temperature ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Low RDS(ON) : 0.22 Ω (Typ.) SFS2955 BVDSS = -60 V RDS(on) = 0.3 Ω ID = -7.3 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed.