Sperrspannung Breakdown voltage 100 µA Dunkelstrom Dark current 100 V 160 V Flußspannung Forward voltage 100 mA Kapazität Capacitance f = 1 MHz, Ev = 0 80 V 150 V Kapazität pro cm2 Capacitance per cm2 120 V Betriebsspannung Operating voltage Ladungsträger - Lebensdauer Charge carrier lifetime Symbol Symbol Wert Value > 180 Einheit Unit V VR IR (< 15) 10 (<.
Substrate: Chip thickness: Topside: Backside: 4600 ± 1400 Ωcm 381 ± 15 µm Aluminium contact 1.4 µm Aluminium total cover 0.1 µm 0.4 µm Au/As q Low dark current q Low capacitance q High breakdown voltage permits operation at full depletion Typ Type SFH 520 SFH 520 A Bestellnummer Ordering Code Q62702-P419 Q62702-P429 485 10.95 Semiconductor Group fes06874 SFH 520 SFH 520 A Kennwerte Characteristics Bezeichnung Description Sperrspannung Breakdown voltage 100 µA Dunkelstrom Dark current 100 V 160 V Flußspannung Forward voltage 100 mA Kapazität Capacitance f = 1 MHz, Ev = 0 80 V 150 V Kapaz.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SFH520 |
Siemens Semiconductor Group |
Detectors | |
2 | SFH521 |
Siemens Semiconductor Group |
Detectors | |
3 | SFH521A |
Siemens Semiconductor Group |
Detectors | |
4 | SFH522 |
Siemens Semiconductor Group |
Radiation Detector | |
5 | SFH523 |
Siemens Semiconductor Group |
#NAME? | |
6 | SFH500 |
Siemens Semiconductor Group |
PHOTOTRANSISTOR | |
7 | SFH505A |
Siemens Semiconductor Group |
IR RECEIVER | |
8 | SFH506 |
Siemens Semiconductor Group |
IR-EMPFANGER | |
9 | SFH507 |
Siemens Semiconductor Group |
IR RECEIVER | |
10 | SFH5110 |
Infineon Technologies AG |
IR-Receiver | |
11 | SFH5111 |
Infineon Technologies AG |
IR-Receiver | |
12 | SFH5140F |
OSRAM |
Schmitt-Trigger |