SFH2030 - Siemens Semiconductor Group

SFH2030 PIN PHOTODIODE

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Top; Tstg TS Wert Value –55 ... +100 300 Einheit Unit oC oC VR Ptot .

Features

q Especially suitable for applications from 400 nm to 1100 nm (SFH 2030) and of 880 nm (SFH 2030 F) q Short switching time (typ. 5 ns) q 5 mm LED plastic package q Also available on tape Applications q Industrial electronics q For control and drive circuits q Light-reflecting switches for steady and varying intensity q Fiber optic transmission systems Gehäuse Package T13/4, klares bzw schwarzes Epoxy-Gieβharz, Lötspieβe im 2.54-mm-Raster (1/10), Kathodenkennzeichnung: kürzerer Lötspieβ, flach am Gehäusebund transparent and black epoxy resin, solder tab 2.54 mm (1/10) lead spacing, cathode mar.