SFF75N06-28 - SSDI

SFF75N06-28 N-Channel Power MOSFET

www.DataSheet4U.com PRELIMINARY SFF75N06-28 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • Rugged construction with poly silicon gate • Low RDS (on) and high transconductance • Excellent high temperature stability • Very fast switching speed • Fast recov.

Features

• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available MAXIMUM RATINGS CHARACTERISTIC Drain to Source Voltage Drain to Gate Voltage (RGS = 1.0 mS) Gate to Source Voltage Continuous Drain Current @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to.